Resistive random access memory structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChern-Yow Hsu, Fu-Ting Sung, Shih-Chang Liu
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a bottom electrode having a first width and a dielectric structure having a second width formed over the bottom electrode. The semiconductor structure further includes a top electrode having a third width formed over the dielectric structure. In addition, the second width of the dielectric structure is greater than the first width of the bottom electrode.
Claims20
A semiconductor structure, comprising:
- a bottom electrode having a first width;
- a dielectric structure having a second width formed over the bottom electrode;
- a top electrode having a third width formed over the dielectric structure;
- and
- a hard mask structure formed over the top electrode,
- wherein the second width of the dielectric structure is greater than the first width of the bottom electrode and the first width of the bottom electrode is greater than the third width of the top electrode.
A semiconductor structure, comprising:
- a resistive random access memory structure formed over a substrate, wherein the resistive random access memory structure comprises
- a bottom electrode formed over the substrate;
- a dielectric structure formed over the bottom electrode;
- a top electrode formed over the dielectric structure;
- and
- a hard mask structure formed over the top electrode;
- an etch stop layer formed over a top surface of the hard mask structure and over sidewalls of the hard mask structure, the top electrode, the dielectric structure, and the bottom electrode;
- and
- an inter-metal dielectric layer formed around the resistive random access memory structure,
- wherein the dielectric structure comprises an extending portion extending into the inter-metal dielectric layer, and neither the bottom electrode nor the top electrode covers the extending portion, and a bottom surface of the extending portion of the dielectric structure is substantially level with a top surface of the bottom electrode.
A resistive random access memory structure, comprising:
- a bottom electrode formed over a substrate;
- a dielectric structure formed over the bottom electrode;
- a top electrode formed over the dielectric structure;
- a hard mask structure formed over the top electrode;
- a via structure formed through the hard mask structure;
- and
- a bit line structure formed over the via structure,
- wherein the hard mask structure and the dielectric structure are both wider than the top electrode, and the top electrode is wider than the bottom electrode.
Dependencies are inferred from the claim text.