Forming resistive memory crossbar array employing selective barrier layer growth
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Chih-Chao Yang, Lawrence A. Clevenger
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Abstract
A method is presented for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array. The method includes forming a plurality of conductive lines within an interlayer dielectric (ILD), forming a barrier layer over at least one conductive line of the plurality of conductive lines, the barrier layer directly contacting an entire upper surface of the at least one conductive line, and forming a RRAM stack including a bottom electrode, a high-k dielectric layer, and a top electrode over the barrier layer.
Claims14
A method for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array, the method comprising:
- forming a plurality of conductive lines within an interlayer dielectric (ILD);
- forming a refractory metal barrier layer over at least one conductive line of the plurality of conductive lines, the refractory metal barrier layer directly contacting an entire upper surface of the at least one conductive line;
- forming a RRAM stack including a bottom electrode, a metal-containing oxide layer, and a top electrode over the refractory metal barrier layer;
- forming an encapsulation layer over the RRAM stack;
- and
- etching the encapsulation layer to form outer spacers adjacent the RRAM stack,
- wherein upper surface areas of the refractory metal barrier layer remain exposed after formation of the outer spacers.
A method for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array, the method comprising:
- forming a refractory metal barrier layer over at least one conductive line of a plurality of conductive lines, the refractory metal barrier layer directly contacting an upper surface of the at least one conductive line;
- forming a RRAM stack over the refractory metal barrier layer, the RRAM stack including at least three layers;
- forming an encapsulation layer over the RRAM stack;
- and
- etching the encapsulation layer to form outer spacers adjacent the RRAM stack;
- wherein upper surface areas of the refractory metal barrier layer remain exposed after formation of the outer spacers.
Dependencies are inferred from the claim text.