Optical-readout synaptic device based on SiOxNy and preparation method thereof

An optical-readout synaptic device based on SiOxNy, comprising a surface plasmonic waveguide and a memristor, wherein:

• the surface plasmonic waveguide has a vertical three-layer structure that a second metal layer, a SiNX dielectric layer and a first metal layer are successively arranged from top to bottom;
• the memristor has a vertical four-layer structure that a second electrode layer, a second resistive layer, a first resistive layer and a first electrode layer are successively arranged from top to bottom;
• the memristor is embedded in the surface plasmonic waveguide, wherein:
• the first resistive layer and the second resistive layer of the memristor serve as an optical signal transmission channel that is horizontally connected with the SiNX dielectric layer of the surface plasmonic waveguide;
• and
• both of the first electrode layer and the second electrode layer of the memristor are made of the noble platinum electrodes, which are obtained through a physical vapor deposition method with a thickness of 10-20 nm and a width equal to a width of the surface plasmonic waveguide.