Back to results
US 10,475,995 B2Granted
Tip-contact controlled three dimensional (3D) vertical self select memory
AssigneeIntel Corporation
InventorPaolo Fantini
Life of this patent
Estimating the term…
Abstract
A variable resistance memory cell with a wide difference (“window”) between threshold voltages is provided. The window between threshold voltages is increased by amplifying the stoichiometry gradient by means of an asymmetry in the memory cell architecture to provide a greater margin for detecting different logic states of the memory cell.
Claims8
A memory comprising:
- a first conductive layer comprising a first conductive material;
- a second conductive layer comprising a second conductive material on top of the first conductive layer;
- a third conductive layer comprising the first conductive material on top of the second conductive layer;
- and
- an insulating layer formed in a first recess in the first conductive layer and a second recess in the third conductive layer to provide a tip contact with a selector material and the second conductive layer, the selector material formed in a third recess in the second conductive layer, a funnel shaped recess in the first conductive layer, a portion of the third conductive layer and a portion of the insulating layer.
2 more elements
A system comprising:
- a processor;
- and
- a memory communicatively coupled to the memory, the memory comprising:
- a first conductive layer comprising a first conductive material;
- a second conductive layer comprising a second conductive material on top of the second conductive layer;
- a third conductive layer comprising the first conductive material on top of the first conductive layer;
- and
- an insulating layer formed in a first recess in the first conductive layer and a second recess in the third conductive layer to provide a tip contact with a selector material and the second conductive layer, the selector material formed in a third recess in the second conductive layer, a funnel shaped recess in the first conductive layer, a portion of the third conductive layer and a portion of the insulating layer.
5 more elements
Dependencies are inferred from the claim text.