US 10,475,987 B1 · Method for fabricating a magnetic tunneling junction (MTJ) structure

Abstract

A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.

Claims15

Dependent claims

A method, comprising:

forming a first stress modulating layer on a first electrode layer, wherein a material of the first stress modulating layer is different from a material of the first electrode layer;
forming a magnetic tunneling junction (MTJ) material stack on the first stress modulating layer;
forming a second stress modulating layer on the MTJ material stack;
forming a second electrode layer on the second stress modulating layer, wherein a material of the second stress modulating layer is different from a material of the second electrode layer;
and
annealing the first stress modulating layer, the MTJ material stack, the second stress modulating layer, and the second electrode layer.

3 more elements

Dependencies are inferred from the claim text.

Method for fabricating a magnetic tunneling junction (MTJ) structure

Life of this patent

Method for fabricating a magnetic tunneling junction (MTJ) structure

Life of this patent

Abstract

Claims15