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US 10,475,986 B1Granted
Magnetoresistive stacks and methods therefor
AssigneeEverspin Technologies, Inc.
InventorJijun Sun
Life of this patent
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Abstract
A magnetoresistive device includes first and second ferromagnetic regions and an intermediate region formed of a dielectric material between the first and second ferromagnetic regions. A surface of the intermediate region at an interface between the intermediate region and at least one of the first and second ferromagnetic regions may be a plasma treated surface.
Claims15
A method of manufacturing a magnetoresistive device, comprising:
- forming a first ferromagnetic region;
- forming an oxidizable region on or above the first ferromagnetic region, wherein the oxidizable region includes at least one layer of an oxidizable material, and wherein the oxidizable material includes one of magnesium or aluminum;
- oxidizing the at least one layer of the oxidizable material to form a dielectric material, wherein the oxidizing includes performing at least one of natural oxidation or plasma oxidation to form the dielectric material;
- plasma treating a surface of the dielectric material, wherein the plasma treating includes exposing the surface to a plasma in an atmosphere having less than or equal to about half an oxygen concentration as compared to the oxygen concentration during the oxidizing;
- and
- forming a second ferromagnetic region on or above the plasma treated surface.
3 more elements
A method of manufacturing a magnetoresistive device, comprising:
- forming a first ferromagnetic region;
- depositing an oxidizable material on or above the first ferromagnetic region;
- oxidizing the deposited oxidizable material to form a dielectric material;
- after forming the dielectric material, plasma treating a surface of the dielectric material, wherein the plasma treating includes exposing the surface to a plasma in an atmosphere having less than or equal to about half an oxygen concentration as compared to an oxygen concentration during the oxidizing;
- and
- forming a second ferromagnetic region on the plasma treated surface of the dielectric material.
3 more elements
Dependencies are inferred from the claim text.