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US 10,475,984 B2Granted
Aluminum nitride piezoelectric thin film, piezoelectric material, piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin film
AssigneesMurata Manufacturing Co., Ltd., National Institute of Advanced Industrial Science and Technology
InventorsKeiichi Umeda, Morito Akiyama, Toshimi Nagase, Keiko Nishikubo, Atsushi Honda
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Abstract
A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.
Claims7
A piezoelectric film containing aluminum nitride and germanium, wherein a polarization direction of the piezoelectric film is a nitrogen polarity, and the polarization direction is a direction opposite to a film growing direction.
Dependencies are inferred from the claim text.