Light emitting diode

A light-emitting diode having a stacked structure composed predominantly of III-V semiconductor layers, the light-emitting diode comprising:

• a first region and a second region and a third region, wherein the first, second, and third regions comprise:
• a substrate, an n-doped lower cladding layer, an active layer generating electromagnetic radiation, and a p-doped upper cladding layer, wherein the active layer includes a quantum well structure;
• a tunnel diode that is formed on the upper cladding layer and is composed of a p+ layer and an n+ layer, wherein the p+ layer of the tunnel diode includes a III arsenide, and the n+ layer of the tunnel diode includes a III phosphide;
• an n-doped current distribution layer, wherein the current distribution layer includes a III arsenide;
• and
• an n-doped contact layer, wherein the n-doped contact includes a III arsenide, the n-doped contact layer being covered with a conductive trace,
• wherein at least the lower cladding layer, the active layer, the upper cladding layer, the tunnel diode, and the current distribution layer are monolithic in design,
• wherein the second region and the third region do not have or in part do not have the additional layers of the first region,
• wherein the second region has a contact hole with a bottom region,
• wherein an injection barrier is provided in the bottom region of the contact hole and formed in a planar manner in the upper cladding layer or at the surface of the upper cladding layer or above the upper cladding layer in order to suppress a current flow opposite the stacking direction,
• wherein a conductive trace is provided with which the injection barrier is covered, and
• wherein the third region is textured, the texture having recesses that extend through the current distribution layer and through the n+ layer of the tunnel diode.