Optoelectronic semiconductor chip

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence composed of AlInGaN comprising an n-conducting n-region, a p-conducting p-region and an intermediate active zone having at least one quantum well for generating a radiation,
• wherein the p-region comprises an electron barrier layer, a contact layer and an intermediate decomposition stop layer, the contact layer being directly adjacent to a contact metallization,
• wherein the decomposition stop layer comprises an aluminum content of at least 5% and at most 30% in places,
• wherein the aluminum content in the decomposition stop layer varies, and
• wherein a thickness of the decomposition stop layer is in total between 30 nm and 150 nm inclusive so that the active zone is operable in resonance with the contact metallization.

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence composed of AlInGaN comprising an n-conducting n-region, a p-conducting p-region and an intermediate active zone having at least one quantum well for generating a radiation,
• wherein the p-region comprises an electron barrier layer, a contact layer and an intermediate decomposition stop layer, the contact layer being directly adjacent to a contact metallization,
• wherein the decomposition stop layer comprises an aluminum content of at least 5% and at most 30% in places,
• wherein an intermediate region arranged between the electron barrier layer and the decomposition stop layer has a thickness between 2 nm and 15 nm inclusive, the intermediate region being free of aluminum,
• wherein the aluminum content in the decomposition stop layer varies and increases on average in a direction towards the contact layer,
• wherein at least one of a thickness of the decomposition stop layer or a thickness of the decomposition stop layer together with the intermediate region is between 30 nm and 120 nm inclusive, and
• wherein the aluminum content in a transition region of the decomposition stop layer decreases in a stepwise manner in the direction towards the contact layer.