Light emitting device having gallium nitrade substrate

A light emitting device package comprising:

• a light emitting device;
• and
• a wavelength conversion layer positioned to convert light emitted by the light emitting device,
• wherein the light emitting device includes a light emitting structure having a first semiconductor layer, an active layer, and a second semiconductor layer, and having a groove which passes through the second semiconductor layer, the active layer, and a portion of the first semiconductor layer;
• a gallium nitride (GaN) substrate positioned on the first semiconductor layer, including two gallium nitride (GaN) layers having respective different dopant concentrations;
• a reflective electrode layer covering a surface of the second semiconductor layer opposite to the second active layer and a portion of sidewalls of the groove;
• a first ohmic electrode positioned in the groove and electrically connected to the first semiconductor layer;
• and
• a first insulating layer positioned between the first ohmic electrode and the reflective electrode layer.