Method for producing a nitride semiconductor component, and a nitride semiconductor component

A nitride semiconductor component, comprising:

• a structured growth substrate, the structured growth substrate having a growth surface formed from a planar area with a plurality of three-dimensionally shaped surface structures which are protrusions of the structured growth substrate that extend away from the planar area, and
• a nitride-based semiconductor layer sequence arranged on the growth surface,
• wherein
• the nitride-based semiconductor layer sequence has growth areas arranged on a growth area at an interface with the growth substrate,
• the growth areas have a higher defect density than the rest of the semiconductor layer sequence,
• the growth area is less than 45% of the growth surface, and
• the protrusions of the structured growth substrate have a conical or pyramidal shape, and
• a layer is deposited on part of the planar area so as to reduce the growth area, the layer comprising a material on which growth of a nitride semiconductor layer material is difficult or impossible.