Optoelectronic device

An optoelectronic device comprising a semiconductor structure including:

• a p-type active region comprising a p-type superlattice;
• an n-type active region comprising an n-type superlattice;
• and
• an i-type active region between the n-type active region and the p-type active region comprising an i-type superlattice;
• wherein:
• the semiconductor structure is comprised solely of one or more superlattices;
• the p-type superlattice is comprised of a plurality of p-type unit cells;
• the n-type superlattice is comprised of a plurality of n-type unit cells;
• the i-type superlattice is comprised of a plurality of i-type unit cells;
• an average alloy content of the plurality of p-type, n-type and i-type unit cells is constant along a growth direction;
• the p-type unit cells comprise a first set of at least two distinct substantially single crystal layers;
• the n-type unit cells comprise a second set of at least two distinct substantially single crystal layers;
• the i-type unit cells comprise a third set of at least two distinct substantially single crystal layers;
• a combined thickness of the third set of at least two distinct substantially single crystal layers is thicker than a combined thickness of the first set of at least two distinct substantially single crystal layers;
• the combined thickness of the third set of at least two distinct substantially single crystal layers is thicker than a combined thickness of the second set of at least two distinct substantially single crystal layers;
• and
• all distinct substantially single crystal layers comprised in the first, second and third sets of at least two distinct substantially single crystal layers have thicknesses that are less than or equal to a critical layer thickness required to maintain elastic strain.