Method for producing a plurality of components, and component

A method for producing a plurality of components, the method comprising:

• providing a carrier composite comprising a base body and a planar connecting surface;
• providing a wafer composite comprising a semiconductor body composite and a planar contact surface;
• connecting the wafer composite to the carrier composite thereby forming a joint composite such that the planar contact surface and the planar connecting surface are joined thereby forming a joint boundary surface;
• reducing inner mechanical stress in the composite by reducing material of the carrier composite in places;
• and
• singulating the joint composite into a plurality of components,
• wherein a plurality of separation trenches are formed through the base body after a preliminary connection and prior to a thermal treatment, and
• wherein, after the thermal treatment, the joint composite is singulated into the plurality of components along the separation trenches such that each component comprises one semiconductor body as a part of the semiconductor body composite and one carrier as a part of the carrier composite.

A component comprising:

• a carrier;
• and
• a main body arranged on the carrier, the main body comprising:
• a semiconductor body with an active layer configured for generating radiation or detecting radiation;
• and
• an electrically-insulating planarization layer facing the carrier and having a planar contact surface;
• and
• the carrier comprising:
• a base body formed of silicon;
• and
• an insulation layer facing the main body, being arranged on the base body and having a planar connecting surface,
• wherein the component comprises a planar boundary surface between the main body and the carrier,
• wherein the planar boundary surface is formed by regions of the planar connecting surface and the planar contact surface immediately adjoining one another,
• wherein the planar boundary surface is free of a connecting material,
• wherein the carrier has a rear side facing away from the connecting surface, which is formed by a surface of the base body and bears traces of mechanical processing,
• wherein the main body comprises a contact structure configured for electrically contacting of the semiconductor body, which is arranged between the semiconductor body and the carrier,
• wherein the component comprises at least one electrically-conductive through-connection which extends from the rear side of the carrier through the base body to the contact structure, and
• wherein the at least on through-connection is formed one-piece and protrudes from the boundary surface in a vertical direction.