Electronic devices comprising n-type and p-type superlattices
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
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Abstract
A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.
Claims22
An electronic device comprising:
- a n-type superlattice providing n-type conductivity;
- an i-type superlattice;
- and
- a p-type superlattice providing p-type conductivity;
- the n-type superlattice comprising alternating host layers and donor impurity layers, wherein:
- the host layers of the n-type superlattice consist essentially of a group III metal nitride semiconductor material;
- and
- the donor impurity layers consist essentially of a corresponding donor material;
- the i-type superlattice comprising alternating host layers and impurity layers;
- wherein:
- the host layers of the i-type superlattice consist essentially of the group III metal nitride semiconductor material;
- and
- the impurity layers consist essentially of a rare-earth or lanthanide metal;
- the p-type superlattice comprising alternating host layers and acceptor impurity layers, wherein:
- the host layers of the p-type superlattice consist essentially of the group III metal nitride semiconductor material;
- and
- the acceptor impurity layers consist essentially of a corresponding acceptor material;
- and
- wherein the group III metal nitride semiconductor material of the host layers of the n-type superlattice, the host layers of the i-type superlattice, and the host layers of the p-type superlattice are the same.
An i-type superlattice, the superlattice comprising:
- alternating host layers and impurity layers, wherein:
- the host layers consist essentially of a group III metal nitride semiconductor material;
- and
- the impurity layers consist essentially of a donor material corresponding to the group III metal nitride semiconductor material, an acceptor material corresponding to the group III metal nitride semiconductor material, or a compensated material comprising the donor material and the acceptor material that correspond to the group III metal nitride semiconductor material.
A method of making an electronic device comprising an n-type superlattice providing n-type conductivity and a p-type superlattice providing p-type conductivity, the method comprising the steps of:
- a. for the p-type superlattice, forming on a substrate a first host layer consisting essentially of a group III metal nitride semiconductor material;
- b. forming above the first host layer an acceptor impurity layer consisting of a monolayer of acceptor atoms;
- c. forming above the acceptor impurity layer a second host layer consisting essentially of the group III metal nitride semiconductor material;
- d. repeating steps (b) to (c) until the p-type superlattice reaches a desired thickness or comprises a desired number of alternating host layers and acceptor impurity layers;
- e. for the n-type superlattice, forming above the p-type superlattice a third host layer consisting essentially of the group III metal nitride semiconductor material;
- f. forming above the third host layer a donor impurity layer consisting of a monolayer of donor atoms;
- g. forming above the donor impurity layer a fourth host layer consisting essentially of the group III metal nitride semiconductor material;
- and
- h. repeating steps (f) to (g) until the n-type superlattice reaches a desired thickness or comprises a desired number of alternating host layers and donor impurity layers;
- wherein the group III metal in the group III metal nitride semiconductor material comprises at least about 50% Al by mol.
Dependencies are inferred from the claim text.