Group III nitride semiconductor light-emitting device
AssigneeToyoda Gosei Co., Ltd.
InventorKoji Okuno
Life of this patent
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Abstract
There are provided a Group III nitride semiconductor light-emitting device having complicated irregularities on the light extraction surface. The light-emitting device comprises a substrate, a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer. The light-emitting device has protrusions extending upward from the surface of the n-type semiconductor layer on the n-type semiconductor layer. Each protrusion has a wall portion disposed so as to intersect with the surface of the n-type semiconductor layer. The wall portion has a first surface facing the n-type semiconductor layer. An angle between the first surface and the n-type semiconductor layer is 10° to 85°.
Claims14
A Group III nitride semiconductor light-emitting device comprising:
- a first semiconductor layer of a first conductive type;
- a light-emitting layer on the first semiconductor layer;
- and
- a second semiconductor layer of a second conductive type on the light-emitting layer, wherein:
- a first protrusion extends upward from a surface of the second semiconductor layer;
- the first protrusion comprises a wall portion disposed so as to intersect with the surface of the second semiconductor layer;
- the wall portion comprises a first surface facing the second semiconductor layer;
- an angle between the first surface and the second semiconductor layer is 10° to 85° ;
- the wall portion comprises a tubular shape;
- and
- an inner diameter of the tubular wall portion increases in a direction away from the surface of the second semiconductor layer.
A Group III nitride semiconductor light-emitting device comprising:
- a first semiconductor layer of a first conductive type;
- a light-emitting layer on the first semiconductor layer;
- and
- a second semiconductor layer of a second conductive type on the light-emitting layer, wherein:
- a first protrusion extends upward from a surface of the second semiconductor layer;
- the first protrusion comprises a wall portion disposed so as to intersect with the surface of the second semiconductor layer;
- the wall portion comprises a first surface facing the second semiconductor layer;
- an angle between the first surface and the second semiconductor layer is 10° to 85°;
- the wall portion comprises a tubular shape;
- an inner diameter of the tubular wall portion decreases in a direction away from the surface of the second semiconductor layer;
- a second protrusion is formed smaller in size than the first protrusion;
- the second protrusion extends upward from the surface of the second semiconductor layer;
- and
- the second protrusion is disposed inside the tubular shape of the first protrusion.
A Group III nitride semiconductor light-emitting device comprising:
- a first semiconductor layer of a first conductive type;
- a light-emitting layer on the first semiconductor layer;
- and
- a second semiconductor layer of a second conductive type on the light-emitting layer, wherein:
- a first protrusion extends upward from a surface of the second semiconductor layer;
- the first protrusion comprises a wall portion disposed so as to intersect with the surface of the second semiconductor layer;
- the wall portion comprises a first surface facing the second semiconductor layer;
- an angle between the first surface and the second semiconductor layer is 10° to 85° ;
- the wall portion comprises a tubular shape;
- an inner diameter of the tubular wall portion decreases in a direction away from the surface of the second semiconductor layer;
- the first protrusion comprises a flat portion in contact with the second semiconductor layer;
- wall portions are connected to one another via the flat portion;
- the wall portion comprises first through holes;
- the flat portion comprises second through holes;
- and
- a density of the first through holes is higher than that of the second through holes.
Dependencies are inferred from the claim text.