Optoelectronic semiconductor chip and method for the production thereof
AssigneeOSRAM Opto Semiconductors GmbH
InventorsAndreas Löffler, Tobias Meyer, Adam Bauer, Christian Leirer
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Abstract
A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.
Claims18
A method for producing an optoelectronic semiconductor chip, the method comprising:
- providing a substrate;
- growing a first layer, wherein the first layer includes a plurality of first sublayers with a first indium content, and a plurality of second sublayers with a second indium content, and wherein the first layer comprises successive first sublayers and second sublayers alternating one another;
- after growing the first layer, performing an etching process to initiate V-defects, wherein the etching process creates an opening in at least one first sublayer and at least one second sublayer, the opening extending completely through the at least one first sublayer and the at least one second sublayer;
- after performing the etching process, growing a second layer;
- and
- after growing the second layer, growing a quantum film structure,
- wherein an active layer of the optoelectronic semiconductor chip is disposed in the quantum film structure, and
- wherein, with respect to the plurality of first sublayers, each successive first sublayer has a degree of doping that is diminished relative to a degree of doping of a prior first sublayer, in a direction toward the second layer.
A method for producing an optoelectronic semiconductor chip, the method comprising:
- providing a substrate;
- growing a first layer including a plurality of first sublayers and a plurality of second sublayers, the first sublayers having a different aluminum concentration or a different indium content than the second sublayers, wherein the first sublayers are grown with a first indium content and the second sublayers are grown with a second indium content, the first indium content being at least as high as the second indium content, wherein the first sublayers and the second sublayers alternating one another;
- performing an etching process to initiate V-defects, wherein an opening is created in at least one first sublayer and at least one second sublayer during the etching process, the opening extending completely through the at least one first sublayer and the at least one second sublayer;
- growing a second layer on the first layer;
- and
- growing a quantum film structure on the second layer, wherein the quantum film structure has a third indium content that is higher than the first indium content,
- wherein the second layer and the quantum film structure are grown in a region of the V-defects.
A method for producing an optoelectronic semiconductor chip, the method comprising:
- providing a substrate;
- growing a first layer, wherein the first layer includes a plurality of first sublayers with a first indium content, and a plurality of second sublayers with a second indium content, and wherein the first layer comprises successive first sublayers and second sublayers alternating one another;
- after growing the first layer, performing an etching process to initiate V-defects, wherein an opening is created in several first sublayers during the etching process, the opening extending completely through the several first sublayers;
- after performing the etching process, growing a second layer;
- and
- after growing the second layer, growing a quantum film structure,
- wherein an active layer of the optoelectronic semiconductor chip is disposed in the quantum film structure.
Dependencies are inferred from the claim text.