Transparent conductive oxide film, photoelectric conversion element, and method for producing photoelectric conversion element

A method for manufacturing a photoelectric conversion element that comprises at least a photoelectric conversion layer and transparent electrode, and comprising processes of:

• conveying the photoelectric conversion layer as a substrate;
• using an inline-type sputtering method to form directly a first transparent conductive oxide film comprising an indium oxide or a tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less on the photoelectric conversion layer that is being conveyed as the substrate;
• using an inline-type sputtering method to form directly a second transparent conductive oxide film comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic %, is layered on top of the first transparent conductive oxide film that is formed on the photoelectric conversion layer that is being conveyed as the substrate;
• and
• obtaining a photoelectric conversion element wherein a layered film comprising the first transparent conductive oxide film that is formed directly on the photoelectric conversion layer side, and the second transparent conductive oxide film that is formed directly on top of the first transparent conductive oxide film is formed as the transparent electrode.

Method for manufacturing a photoelectric conversion element that comprises at least a transparent substrate, a photoelectric conversion layer and a transparent electrode, and comprising steps of:

• conveying the transparent substrate;
• using an inline-type sputtering method to form a second transparent conductive oxide film comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic % on the transparent substrate that is being conveyed;
• using an inline-type sputtering method to form directly a first transparent conductive oxide film comprising an indium oxide or a tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less on the second transparent conductive oxide film that is formed on the transparent substrate that is being conveyed;
• forming directly a photoelectric conversion layer on top of the first transparent conductive oxide film;
• and
• obtaining a photoelectric conversion element wherein a layered film comprising the first transparent conductive oxide film that is formed directly on the photoelectric conversion layer side, and the second transparent conductive oxide film that is layered directly on the first transparent conductive oxide film and laminated on an opposite side of the photoelectric conversion layer is formed as the transparent electrode.