Transistor structure and method for fabricating the same
AssigneeUntied Microelectronics Corp.
InventorsShao-Hui Wu, Yu-Cheng Tung
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Abstract
A transistor structure includes a first oxide semiconductor layer, a source structure and a drain structure, and a second oxide semiconductor layer. The first oxide semiconductor layer is doped with sulfur. The source structure and the drain structure are disposed on the first oxide semiconductor layer, and a region of the first oxide semiconductor layer between the source structure and the drain structure forms a channel region. The second oxide semiconductor layer doped with sulfur is at least formed on the channel region of the first oxide semiconductor layer.
Claims18
A transistor structure, comprising:
- a first oxide semiconductor layer doped with sulfur;
- a source structure and a drain structure, disposed on one side of the first oxide semiconductor layer, wherein a region of the first oxide semiconductor layer between the source structure and the drain structure forms a channel region;
- and
- a second oxide semiconductor layer doped with sulfur, at least disposed on the channel region and on the side of the first oxide semiconductor layer,
- wherein the second oxide semiconductor layer comprises a portion disposed directly on the source structure and the drain structure or directly on the source structure and further extending toward an outer side of the source structure and the drain structure and contacting the first oxide semiconductor layer.
A fabricating method of a transistor structure, comprising:
- providing a structural substrate having a first oxide semiconductor layer doped with sulfur;
- forming a source structure and a drain structure on one side of the first oxide semiconductor layer, wherein a channel region of the first oxide semiconductor layer between the source structure and the drain structure is exposed;
- and
- forming a second oxide semiconductor layer doped with sulfur and at least disposed on the channel region and on the side of the first oxide semiconductor layer,
- wherein the second oxide semiconductor layer comprises a portion disposed directly on the source structure and the drain structure.
Dependencies are inferred from the claim text.