Method of forming crystalline oxides on III-V materials
AssigneesSamsung Electronics Co., Ltd., Board of Regents, The University of Texas System
InventorsWei-E Wang, Mark S. Rodder, Robert M. Wallace, Xiaoye Qin
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Abstract
A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.
Claims7
A method of forming a crystalline oxide on a III-V material, the method comprising:
- providing a substrate;
- forming a III-V material comprising three elements on the substrate by epitaxy;
- and
- forming a crystalline oxide layer comprising an oxide on the III-V material, the step of forming the crystalline oxide layer including removing Ga2O3 (Ga3+), removing In2O (In1+) and removing As2O3 (As3+) to form a (3×2)-O Ga2O oxide in the crystalline oxide layer.
A method of forming a crystalline oxide on a III-V material, the method comprising:
- providing a substrate;
- forming a III-V material comprising three elements on the substrate by epitaxy;
- forming a crystalline oxide layer comprising an oxide on the III-V material;
- and
- removing Ga2O3 (Ga3+), removing In2O (In1+) and removing As2O3 (As3+) to form a (3×2)-O Ga2O oxide in the crystalline oxide layer;
- wherein removing Ga2O3 (Ga3+), removing In2O (In1+), and removing As2O3 (As3+) comprises annealing the substrate in atomic hydrogen at about 200° C. to about 400° C. for about 1 minute to about 10 minutes.
A method of forming a crystalline oxide on a III-V material, the method comprising:
- providing a substrate;
- forming a III-V material comprising three elements on the substrate by epitaxy;
- forming a crystalline oxide layer comprising an oxide on the III-V material;
- and
- adding Ga1+ to form a (3×2)-O oxide in the crystalline oxide layer.
A method of forming a crystalline oxide on a III-V material, the method comprising:
- providing a substrate;
- forming a III-V material comprising three elements on the substrate by epitaxy;
- and
- forming a crystalline oxide layer comprising an oxide on the III-V material;
- removing Ga2O3 (Ga3+), removing In2O (In1+), and removing As2O3 (As3+), such that Ga2O (Ga1+) remains in a crystalline manner to form a (3×2)-O oxide in the crystalline oxide layer.
A method of forming a crystalline oxide on a III-V material, the method comprising:
- providing a substrate;
- forming a III-V material comprising three elements on the substrate by epitaxy;
- forming a crystalline oxide layer comprising an oxide on the III-V material;
- and
- annealing the substrate in atomic hydrogen to remove Ga2O3 (Ga3+) oxide from the crystalline oxide layer.
Dependencies are inferred from the claim text.