Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMark Van Dal
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Abstract
A method of manufacturing a semiconductor device includes forming a nanowire foundation layer on a semiconductor substrate. A first nanowire is formed on the nanowire foundation layer. A gate structure is formed over the nanowire foundation layer and wrapping the first nanowire. A second nanowire is formed on and in contact with the first nanowire in a bottom-up manner. A source/drain region is formed on the gate structure and wrapping the second nanowire.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a fin on a semiconductor substrate;
- recessing the fin;
- forming a nanowire foundation layer on the recessed fin;
- forming a first nanowire on the nanowire foundation layer;
- forming a gate structure over the nanowire foundation layer and wrapping the first nanowire;
- growing a second nanowire on and in contact with the first nanowire in a bottom-up manner;
- and
- forming a source/drain region on the gate structure and wrapping the second nanowire.
A method of manufacturing a semiconductor device, the method comprising:
- forming a vertical gate-all-around (VGAA) transistor over a semiconductor substrate;
- growing a second nanowire on and in contact with a first nanowire of the VGAA transistor in a bottom-up manner;
- forming a word line over the VGAA transistor and wrapping the second nanowire;
- growing a third nanowire on and in contact with the second nanowire;
- and
- forming a bit line over the word line and wrapping the third nanowire.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first nanowire foundation layer on a semiconductor substrate;
- forming a dielectric layer on the first nanowire foundation layer;
- patterning the dielectric layer to form a through hole that exposes a portion of the first nanowire foundation layer;
- forming a first nanowire on the first nanowire foundation layer, wherein a portion of the first nanowire is formed in the through hole;
- forming a gate structure over the first nanowire foundation layer and wrapping the first nanowire;
- growing a third nanowire on and in contact with the first nanowire in a bottom-up manner;
- and
- forming a source/drain region on the gate structure and wrapping the third nanowire.
Dependencies are inferred from the claim text.