Back to results
US 10,475,924 B2Granted
Ferroelectric memory devices
AssigneeSK hynix Inc.
InventorHyangkeun Yoo
Life of this patent
Estimating the term…
Abstract
A ferroelectric memory device includes a substrate, a ferroelectric layer, a variable resistive memory layer and a gate electrode which are sequentially stacked on a surface of the substrate. The ferroelectric layer has any one of a plurality of different remanent polarization values depending on a resistive state of the variable resistive memory layer.
Claims8
A ferroelectric memory device comprising:
- a substrate;
- and
- a ferroelectric layer, a variable resistive memory layer and a gate electrode which are sequentially stacked on a surface of the substrate,
- wherein the ferroelectric layer has any one of a plurality of different remanent polarization values depending on a resistive state of the variable resistive memory layer,
- wherein the resistive state of the variable resistive memory layer varies according to a voltage applied between the gate electrode and the substrate, and
- wherein an absolute value of a first voltage for switching a resistance value of the variable resistive memory layer is greater than an absolute value of a second voltage for switching polarization of the ferroelectric layer, and
- wherein the gate electrode comprises at least one of a tungsten material, an aluminum material, a copper material, a tantalum material, a titanium material, a gold material, a silver material, a ruthenium material, an iridium material, a molybdenum material, a tungsten nitride material, an aluminum nitride material, a titanium nitride material, a tantalum nitride material, a molybdenum nitride material, a niobium nitride material, a titanium silicon nitride material, a titanium aluminum nitride material, a titanium boron nitride material, a zirconium silicon nitride material, a tungsten silicon nitride material, a tungsten boron nitride material, a zirconium aluminum nitride material, a molybdenum silicon nitride material, a molybdenum aluminum nitride material, a tantalum silicon nitride material, a tantalum aluminum nitride material, a ruthenium nitride material and a doped silicon material.
4 more elements
A ferroelectric memory device comprising:
- a substrate;
- a ferroelectric layer disposed on the substrate;
- a variable resistive memory layer disposed on the ferroelectric layer;
- a gate electrode disposed on the variable resistive memory layer;
- and
- a source region and a drain region disposed in the substrate to be spaced apart from each other,
- wherein an absolute value of a first voltage for switching a resistance value of the variable resistive memory layer is greater than an absolute value of a second voltage for switching polarization of the ferroelectric layer, and
- wherein the ferroelectric layer includes at least one of a hafnium oxide material, a zirconium oxide material and a hafnium zirconium oxide material.
5 more elements
A ferroelectric memory device comprising:
- a substrate;
- a ferroelectric layer disposed on the substrate;
- a variable resistive memory layer disposed on the ferroelectric layer;
- a gate electrode disposed on the variable resistive memory layer;
- and
- a source region and a drain region disposed in the substrate to be spaced apart from each other,
- wherein an absolute value of a first voltage for switching a resistance value of the variable resistive memory layer is greater than an absolute value of a second voltage for switching polarization of the ferroelectric layer, and
- wherein the variable resistive memory layer includes at least one of a titanium oxide material, an aluminum oxide material, a nickel oxide material, a copper oxide material, a zirconium oxide material, a manganese oxide material, a hafnium oxide material, a tungsten oxide material, a tantalum oxide material, a niobium oxide material and a ferrum oxide material.
5 more elements
Dependencies are inferred from the claim text.