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US 10,475,922 B2Granted
Method for producing semiconductor device and semiconductor device
AssigneeUnisantis Electronics Singapore Pte. Ltd.
InventorsFujio Masuoka, Hiroki Nakamura
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Abstract
A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and a first insulating film around the fin-shaped semiconductor layer. A first contact is on the fin-shaped semiconductor layer, where the first contact is metal contact. A first gate insulating film is around the first contact and a fourth contact on the first contact, and a second gate insulating film is around the fourth contact.
Claims6
A semiconductor device, comprising:
- a fin-shaped semiconductor layer on a semiconductor substrate;
- a first insulating film around the fin-shaped semiconductor layer;
- a first contact on the fin-shaped semiconductor layer,
- wherein the first contact comprises a metal contact;
- a first gate insulating film around the first contact;
- a fourth contact on the first contact;
- and
- a second gate insulating film around the fourth contact.
5 more elements
Dependencies are inferred from the claim text.