Mosfet
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorsDaisuke Arai, Shigeru Hisada, Mizue Kitada, Takeshi Asada
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AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorsDaisuke Arai, Shigeru Hisada, Mizue Kitada, Takeshi Asada
Estimating the term…
A MOSFET includes a semiconductor base substrate where a super junction structure is formed of an n-type column region and a p-type column region. A total amount of a dopant in the n-type column region is set to a value greater than a total amount of a dopant in the p-type column region. The MOSFET is configured to be operated during a period from a point of time when a drain current starts to decrease to a point of time when the drain current becomes 0 for the first time in response to turning off of the MOSFET such that a first period during which the drain current is decreased, a second period during which the drain current is increased or the drain current becomes constant, and a third period during which the drain current is decreased again occur in this order.
A MOSFET used in a power conversion circuit which includes a power source and the MOSFET for controlling an electric current supplied from the power source, wherein
Dependencies are inferred from the claim text.