Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a first electrode;
• a second electrode;
• a third electrode, a position of the third electrode in a first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
• a first layer,
• the first layer including
• a first semiconductor region including at least one of Aly1Ga1-y1N (0<y1<1) or p-type Alz1Ga1-z1N (0≤z1<1),
• a second semiconductor region including at least one of Aly2Ga1-y2N (0<y2<1) or p-type Alz2Ga1-z2N (0≤z2<1), and
• a third semiconductor region including Aly3Ga1-y3N (0≤y3<1),
• at least a portion of the second semiconductor region being positioned between the second electrode and a portion of the first semiconductor region in a second direction crossing the first direction,
• a portion of the third semiconductor region being positioned between the portion of the first semiconductor region and the at least a portion of the second semiconductor region in the second direction,
• another portion of the third semiconductor region being positioned between the third electrode and another portion of the first semiconductor region in the second direction,
• the first semiconductor region having a first surface separated from the first electrode in the second direction,
• the second semiconductor region having a second surface and a third surface, the second surface being separated from the second electrode in the second direction and aligned with a first plane including the first surface, the third surface being separated from the third electrode in the second direction and tilted with respect to the first plane;
• a second layer including Alx2Ga1-x2N(0≤x2<1) and including a first partial region, a second partial region, and a third partial region, the first partial region being provided between the first electrode and the first surface in the second direction, the second partial region being provided between the second electrode and the second surface in the second direction, the third partial region being provided between the third electrode and the third surface in the second direction;
• a third layer including Alx3Ga1-x3N (0<x3<1,) and including a fourth partial region, a fifth partial region, and a sixth partial region, the fourth partial region being provided between the first electrode and the first partial region in the second direction, the fifth partial region being provided between the second electrode and the second partial region in the second direction, the sixth partial region being provided between the third electrode and the third partial region in the second direction, the fourth partial region being electrically connected to the first electrode, the fifth partial region being electrically connected to the second electrode;
• and
• an insulating layer provided between the third electrode and the sixth partial region in the second direction.