US 10,475,913 B2 · Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion

Abstract

The present invention provides an epitaxial structure of N-face AlGaN/GaN, its active device, and the method for fabricating the same. The structure comprises a substrate, a C-doped buffer layer on the substrate, a C-doped i-GaN layer on the C-doped buffer layer, a i-AlyGaN buffer layer on the C-doped i-GaN layer, an i-GaN channel layer on the C-doped i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By using the p-GaN inverted trapezoidal gate or anode structure in device design, the 2DEG in the epitaxial structure of N-face AlGaN/GaN below the p-GaN inverted trapezoidal gate structure will be depleted. Then the 2DEG is located at the junction between the i-GaN channel layer and the i-AlyGaN layer, and thus fabricating p-GaN gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs).

Claims23

Dependent claims

An epitaxial structure of N-face AlGaN/GaN, comprising:

a substrate;
a C-doped buffer layer, located on said substrate;
a C-doped i-GaN layer, located on said C-doped buffer layer;
an i-AlyGaN buffer layer, located on said C-doped i-GaN layer;
an i-GaN channel layer, located on said i-AlyGaN buffer layer;
and
an i-AlxGaN layer, located on said i-GaN channel layer;
where x=0.1˜0.3;
y=0.05˜0.75.

6 more elements

A method for fabricating a selective-epitaxial-growth p-GaN gate enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion, comprising steps of:

providing an epitaxial structure of N-face AlGaN/GaN;
forming a first source ion implantation region and a first drain ion implantation region in said i-AlxGaN layer;
forming a p-GaN inverted trapezoidal gate structure on said epitaxial structure of N-face AlGaN/GaN using selective epitaxial growth;
forming a first gate metal layer on said p-GaN inverted trapezoidal gate structure;
and
forming a first source metal layer and a first drain metal layer on said epitaxial structure of N-face AlGaN/GaN, said first source metal layer located on said first source ion implantation region, and said first drain metal layer located on said first drain ion implantation region;
where said epitaxial structure of N-face AlGaN/GaN comprises:
a substrate;
a C-doped buffer layer, located on said substrate;
a C-doped i-GaN layer, located on said C-doped buffer layer;
an i-AlyGaN buffer layer, located on said C-doped i-GaN layer;
an i-GaN channel layer, located on said i-AlyGaN buffer layer;
and
an i-AlxGaN layer, located on said i-GaN channel layer;
where x=0.1˜0.3;
y=0.05˜0.75.

13 more elements

A method for fabricating a hybrid enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion, comprising steps of:

providing an epitaxial structure of N-face AlGaN/GaN, and dividing said epitaxial structure of N-face AlGaN/GaN into a left region and a right region;
forming a selective-epitaxial-growth p-GaN gate and self-aligned gate metal enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion in said left region by steps comprising:
forming a first source ion implantation region and a first drain ion implantation region in said i-AlxGaN layer;
forming a p-GaN inverted trapezoidal gate structure on said epitaxial structure of N-face AlGaN/GaN using selective epitaxial growth and the two-dimensional electron gas below said p-GaN inverted trapezoidal gate structure being depleted;
forming a first gate metal layer on said p-GaN inverted trapezoidal gate structure;
and
forming a first source metal layer and a first drain metal layer on said epitaxial structure of AlGaN/GaN, said first source metal layer located on said first source ion implantation region, and said first drain metal layer located on said first drain ion implantation region;
and
forming a depletion-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion and without gate dielectric layer in said right region by steps comprising:
forming a second source ion implantation region and a second drain ion implantation region in said i-AlxGaN layer;
and
forming a second source metal layer and a second drain metal layer on said epitaxial structure of N-face AlGaN/GaN, said second source metal layer located on said second source ion implantation region, and said second drain metal layer located on said second drain ion implantation region;
where said epitaxial structure of N-face AlGaN/GaN comprises:
a substrate;
a C-doped buffer layer, located on said substrate;
a C-doped i-GaN layer, located on said C-doped buffer layer;
an i-AlyGaN buffer layer, located on said C-doped i-GaN layer;
an i-GaN channel layer, located on said i-AlyGaN buffer layer;
and
an i-AlxGaN layer, located on said i-GaN channel layer;
where x=0.1˜0.3;
y=0.05˜0.75.

19 more elements

A hybrid enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion, comprising:

an epitaxial structure of N-face AlGaN/GaN, divided into a left region and a right region;
a selective-epitaxial-growth p-GaN gate and self-aligned gate metal enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion, located in said left region, comprising:
a p-GaN inverted trapezoidal gate structure, a first source metal layer, and a first drain metal layer, located on said i-AlxGaN layer, and the two-dimensional electron gas below said p-GaN inverted trapezoidal gate structure being depleted;
a first source ion implantation region and a first drain ion implantation region, located in said i-AlxGaN layer, said first source ion implantation region located below said first source metal layer, and said first drain ion implantation region located below said first drain metal layer;
and
a first gate metal layer, located on said p-GaN inverted trapezoidal gate structure;
and
a depletion-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion and without gate dielectric layer, located in said right region, comprising:
a second source metal layer and a second drain metal layer, located on said i-AlxGaN layer;
and
a second source ion implantation region and a second drain ion implantation region, located in said i-AlxGaN layer, said second source ion implantation region located below said second source metal layer, and said second drain ion implantation region located below said second drain metal layer;
where said epitaxial structure of N-face AlGaN/GaN comprises:
a substrate;
a C-doped buffer layer, located on said substrate;
a C-doped i-GaN layer, located on said C-doped buffer layer;
an i-AlyGaN buffer layer, located on said C-doped i-GaN layer;
an i-GaN channel layer, located on said i-AlyGaN buffer layer;
and
an i-AlxGaN layer, located on said i-GaN channel layer;
where x=0.1˜0.3;
y=0.05˜0.75.

18 more elements

A method for fabricating a hybrid enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion, comprising steps of:

providing an epitaxial structure of N-face AlGaN/GaN, and dividing said epitaxial structure of N-face AlGaN/GaN into a left region and a right region;
forming a selective-epitaxial-growth p-GaN gate and self-aligned gate metal enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion in said left region by steps comprising:
forming a first source ion implantation region and a first drain ion implantation region in said i-AlxGaN layer;
forming a p-GaN inverted trapezoidal gate structure on said epitaxial structure of N-face AlGaN/GaN using selective epitaxial growth and the two-dimensional electron gas below said p-GaN inverted trapezoidal gate structure being depleted;
forming a first gate metal layer on said p-GaN inverted trapezoidal gate structure;
and
forming a first source metal layer and a first drain metal layer on said epitaxial structure of N-face AlGaN/GaN, said first source metal layer located on said first source ion implantation region, and said first drain metal layer located on said first drain ion implantation region;
and
forming a depletion-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion and gate dielectric layer in said right region by steps comprising:
forming a second source ion implantation region and a second drain ion implantation region in said i-AlxGaN layer;
forming a second source metal layer and a second drain metal layer on said epitaxial structure of N-face AlGaN/GaN, said second source metal layer located on said second source ion implantation region, and said second drain metal layer located on said second drain ion implantation region;
and
forming a gate dielectric layer on said epitaxial structure of N-face AlGaN/GaN;
where said epitaxial structure of N-face AlGaN/GaN comprises:
a substrate;
a C-doped buffer layer, located on said substrate;
a C-doped i-GaN layer, located on said C-doped buffer layer;
an i-AlyGaN buffer layer, located on said C-doped i-GaN layer;
an i-GaN channel layer, located on said i-AlyGaN buffer layer;
and
an i-AlxGaN layer, located on said i-GaN channel layer;
where x=0.1˜0.3;
y=0.05˜0.75.

20 more elements

Dependencies are inferred from the claim text.

Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion

Life of this patent

Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion

Life of this patent

Abstract

Claims23