Semiconductor device having a source region with chalcogen atoms
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Philip Christoph Brandt, Andre Rainer Stegner
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Abstract
Some embodiments relate to a semiconductor device that includes a body region of a field effect transistor structure formed in a semiconductor substrate between a drift region of the field effect transistor structure and a source region of the field effect transistor structure. The semiconductor substrate includes chalcogen atoms at an atom concentration of less than 1×1013 cm−3 at a p-n junction between the body region and the drift region, and at least part of the source region includes chalcogen atoms at an atom concentration of greater than 1×1014 cm−3. Additional semiconductor device embodiments and corresponding methods of manufacture are described.
Claims20
A semiconductor device, comprising:
- a body region of a field effect transistor structure formed in a semiconductor substrate between a drift region of the field effect transistor structure and a source region of the field effect transistor structure,
- wherein the semiconductor substrate comprises chalcogen atoms at an atom concentration of less than 1×1013 cm−3 at a p-n junction between the body region and the drift region,
- wherein at least part of the source region comprises chalcogen atoms at an atom concentration of greater than 1×1014 cm−3.
A semiconductor device, comprising:
- a body region of a field effect transistor structure formed in a semiconductor substrate and a source region formed adjacent to the body region, at least part of the source region comprising chalcogen atoms at an atom concentration of greater than 1×1013 cm−3;
- a contact trench extending into the semiconductor substrate;
- and
- an electrode structure formed in the contact trench, wherein the electrode structure is in contact with the body region at the bottom of the contact trench and in contact with the source region at a sidewall of the contact trench.
Dependencies are inferred from the claim text.