Electric assembly including a bipolar switching device and a wide bandgap transistor

An electric assembly, comprising:

• a bipolar switching device;
• and
• a transistor circuit electrically connected in parallel with the bipolar switching device and comprising a normally-on wide bandgap transistor,
• wherein the normally-on wide bandgap transistor is a normally-on junction field effect transistor,
• wherein a semiconductor portion of the junction field effect transistor is from silicon carbide,
• wherein the semiconductor portion comprises junction transistor cells and an integrated body diode, an anode region of the body diode is electrically connected to a source terminal of the junction field effect transistor, and a drain structure of the junction transistor cells is effective as a cathode region of the body diode,
• and wherein the junction transistor cells comprise gate regions forming first pn junctions with channel regions that connect the drain structure with source regions separated from the drain structure by the channel regions, and shielding regions sandwiched between the channel regions and the drain structure and forming second pn junctions with the channel regions and third pn junctions with the drain structure.

An electric assembly, comprising:

• a bipolar switching device;
• a transistor circuit electrically connected in parallel with the bipolar switching device and comprising a normally-on wide bandgap transistor;
• and
• a voltage limiting device electrically connected between a control terminal of the transistor circuit and a gate terminal of the wide bandgap transistor, wherein the voltage limiting device is adapted to limit a voltage at the gate terminal of the wide bandgap transistor to at most 2 V.