Semiconductor device and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAryan Afzalian
Life of this patent
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Abstract
A semiconductor device includes a channel region, a source region having a first type semiconductor and a drain region having a second type semiconductor on opposing sides of the channel region. A gate stack is disposed over the channel region. A low-k spacer is disposed over the source region and abreast the gate stack. The source region includes a first type dopant, and the drain region includes a second type dopant. A pocket is disposed between the channel region and the source region. The pocket has the first type semiconductor and a higher first type dopant concentration than a first type dopant concentration of the source region.
Claims20
A semiconductor device comprising:
- a channel region;
- a source region having a first type dopant and a drain region having a second type dopant on opposing sides of the channel region;
- a gate stack disposed over the channel region;
- a pocket between the channel region and the source region, the pocket having the first type dopant, wherein a first type dopant concentration of the pocket is higher than a first type dopant concentration of the source region;
- and
- a low-k spacer disposed over the source region, wherein a bottom surface of the low-k spacer is in contact with the pocket and the source region.
A semiconductor device comprising:
- a channel region;
- a source region having a first type dopant;
- a drain region having a second type dopant, the source region and drain region being on opposing sides of the channel region;
- a gate stack around the channel region;
- a pocket disposed between the channel region and the source region, the pocket having the first type dopant, wherein the pocket has a higher first type dopant concentration than a first type dopant concentration of the source region;
- and
- a low-k spacer having a sidewall in contact with the pocket and the source region.
A semiconductor device comprising:
- a channel region;
- a source region and a drain region being on opposing sides of the channel region, wherein the source region and the channel region have a first doped type, the drain region has a second doped type, and a width of the drain region is wider than a width of the channel region and a width of the source region;
- an intrinsic semiconductor shell disposed surrounding the channel region and interposed between the channel region and the drain region;
- and
- a gate stack disposed around the channel region, wherein the intrinsic semiconductor shell is interposed between the gate stack and the channel region.
Dependencies are inferred from the claim text.