Vertical tunnel field effect transistor (FET)

A vertical tunnel field effect transistor (FET), comprising:

• a first layer having a first type of dopant;
• a second layer surrounding a circumference of the first layer and having a second type of dopant different than the first type of dopant;
• a gate dielectric surrounding a circumference of the second layer;
• a gate electrode surrounding a circumference of the gate dielectric;
• and
• a substrate in contact with the first layer, the second layer, and the gate dielectric, wherein the gate electrode is spaced apart from the substrate by the gate dielectric.

A vertical tunnel field effect transistor (FET), comprising:

• a first type shell around a core, wherein the first type shell has a first material composition and the core has a second material composition different than the first material composition;
• a second type channel shell around the first type shell, the second type channel shell comprising a doping opposite a doping of the first type shell;
• a gate dielectric around the second type channel shell;
• a gate electrode around the gate dielectric, wherein the gate electrode overlies the gate dielectric;
• and
• a substrate in contact with the first type shell, the second type channel shell, and the gate dielectric, wherein the gate electrode is spaced apart from the substrate by the gate dielectric.