Methods of forming merged source/drain regions on integrated circuit products

A method of forming a merged source/drain region, comprising:

• forming first and second vertically oriented channel semiconductor (VOCS) structures above a semiconductor substrate;
• performing at least an anisotropic etching process to form a recess in said substrate between said first and second VOCS structures;
• performing a first epitaxial growth process while introducing a P-type dopant during said first epitaxial growth process so as to form a substantially horizontally-oriented in situ P-type-doped semiconductor material in said recess;
• removing a first substantially horizontally-oriented portion of said substantially horizontally-oriented in situ P-type-doped semiconductor material from within said recess while leaving a second substantially horizontally-oriented portion of said substantially horizontally-oriented in situ P-type-doped semiconductor material remaining in said recess;
• and
• performing a second epitaxial growth process while introducing an N-type dopant during said second epitaxial growth process so as to form a substantially horizontally-oriented in situ N-type-doped semiconductor material in said recess adjacent said second substantially horizontally-oriented portion of said substantially horizontally-oriented in situ P-type-doped semiconductor material, wherein said substantially horizontally-oriented in situ N-type-doped semiconductor material physically engages said second substantially horizontally-oriented portion of said substantially horizontally-oriented in situ P-type-doped semiconductor material along an interface within said merged source/drain region.