Method for manufacturing a semiconductor device with a cobalt silicide film

A method for manufacturing a semiconductor device with a cobalt silicide film, comprising:

• providing a silicon structure, wherein an interlayer dielectric is formed on said silicon structure;
• forming a contact hole in said interlayer dielectric to expose said silicon structure;
• depositing a cobalt film on said exposed silicon structure at a temperature between 300° C.−400° C., wherein a cobalt protecting film is in-situ formed on the exposed surface of said cobalt film, and said cobalt film is between said silicon structure and said cobalt protecting film;
• performing a rapid thermal process to transform said cobalt film into a cobalt silicide film;
• and
• removing untransformed cobalt film, wherein no additional rapid thermal process is performed after said untransformed cobalt film is removed.