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US 10,475,894 B2Granted
Semiconductor device
AssigneeRohm Co., Ltd.
InventorsYuki Nakano, Ryota Nakamura, Katsuhisa Nagao
Life of this patent
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Abstract
A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.
Claims15
A semiconductor device comprising:
- a first conductivity type semiconductor layer having an off-angle principal plane that is off angle relative to an internal crystalline plane;
- a trench formed in the semiconductor layer including a pair of side surfaces which face each other, the trench having a tapered shape by narrowing a distance between the pair of side surfaces from the principal plane toward a depth direction of the trench, wherein
- an inclination relative to the off-angle of one surface of the pair of side surfaces is different from that of the other surface of the pair of side surfaces;
- wherein the smaller of the inclinations of the pair of surfaces is less than 3° exceeding 1°.
1 more element
A semiconductor device comprising:
- a first conductivity type SiC substrate;
- a first conductivity type epitaxial layer formed on the SiC substrate, the epitaxial layer having an off-angle principal plane on an opposite side of the SiC substrate that is off angle relative to an internal crystalline plane;
- a first conductivity type source region formed in the epitaxial layer at the principal plane side;
- a second conductivity type body region formed on an opposite side of source region from the principal plane;
- a gate trench formed in the epitaxial layer such that the gate trench penetrates the source region and the body region from the principal plane, the gate trench including a pair of side surfaces which face each other, and the gate trench having a tapered shape by narrowing a distance between the pair of side surfaces from the principal plane toward a depth direction of the gate trench;
- a gate insulating film formed on an inner surface of the gate trench;
- and
- a gate electrode formed inside the gate trench adjacent the gate insulating film, wherein
- an inclination relative to the off-angle of one surface of the pair of side surfaces is different from that of the other surface of the pair of side surfaces;
- wherein the smaller of the inclinations of the pair of surfaces is less than 3° exceeding 1°.
7 more elements
Dependencies are inferred from the claim text.