Tunneling field effect transistor and method of fabricating the same

A method for forming a tunneling field effect transistor, comprising:

• providing a semiconductor substrate;
• forming a source region on the semiconductor substrate;
• forming a tunneling region on the source region, wherein the tunneling region comprises a sidewall and a top surface;
• forming a drain on the tunneling region;
• depositing a gate dielectric layer covering the sidewall and the top surface of the tunneling region;
• depositing a first metal layer covering the gate dielectric layer;
• performing an anisotropic etching process to remove a portion of the first metal layer to form non-continuous layers of the first metal layer on the sidewall and exposing the gate dielectric layer between two non-continuous layers of the first metal layer;
• and
• depositing a second metal layer directly covering the first metal layer and the gate dielectric layer after the step of performing an anisotropic etching process.