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US 10,475,888 B2Granted
Integration of III-V devices on Si wafers
AssigneeIntel Corporation
InventorsSansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung, Robert S. Chau
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Abstract
An insulating layer is conformally deposited on a plurality of mesa structures in a trench on a substrate. The insulating layer fills a space outside the mesa structures. A nucleation layer is deposited on the mesa structures. A III-V material layer is deposited on the nucleation layer. The III-V material layer is laterally grown over the insulating layer.
Claims18
An electronic device, comprising:
- a mesa structure having a top surface and a sidewall on a substrate, wherein the mesa structure is aligned along a {0001} crystal orientation;
- a first insulating layer on the sidewall of the mesa structure;
- a III-V material layer on the top surface of the mesa structure, wherein the III-V material layer has a lateral epitaxial overgrowth portion on the first insulating layer.
A system comprising:
- a chip including an electronic device comprising a mesa structure having a top surface and a sidewall on a substrate, wherein the mesa structure is aligned along a {0001} crystal orientation;
- a first insulating layer on the sidewall of the mesa structure;
- a III-V material layer on the top surface of the mesa structure, wherein the III-V material layer has a lateral epitaxial overgrowth portion on the first insulating layer.
A method to manufacture an electronic device comprising:
- forming a mesa structure comprising a top surface and a sidewall on a substrate;
- depositing a first insulating layer on the sidewall of the mesa structure;
- depositing a III-V material layer on the top surface of the mesa structure;
- and
- laterally growing the III-V material layer from the top surface over the first insulating layer, wherein forming the mesa structure comprises:
- depositing a mask layer in a trench in a second insulating layer on the substrate;
- patterning the mask layer;
- and
- etching the substrate through the patterned mask layer.
6 more elements
Dependencies are inferred from the claim text.