US 10,475,887 B2 · Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

Abstract

An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.

Claims15

Dependent claims

A self-standing GaN substrate having a first principal surface and a second principal surface, the first principal surface and the second principal surface facing away from each other, and having an angle between a normal of the first principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein:

a first projected image obtained by vertically projecting the first principal surface on an M-plane has a size of 10 mm or more in a c-axis direction;
and
when an a-axis length is measured on an intersection line between the first principal surface and an A-plane, a first section having a section length of 6 mm or more and an a-axis length variation within the first section of 10.0×10−5 Å or less is observed.

Dependencies are inferred from the claim text.

Facts

Application

15/016,409Filed 5 Feb 2016 · continuation

Priority

JP 2013-1652938 Aug 2013

Published

US 2016/0233306 A111 Aug 2016

Granted

12 Nov 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 62/8503
Being Group III-V materials, e.g. GaAs: nitride Group III-V materials, e.g. AlN or GaN
C30B 7/105
By application of pressure, e.g. hydrothermal processes: using ammonia as solvent, i.e. ammonothermal processes
C30B 25/186
Characterised by the substrate: being specially pre-treated by, e.g. chemical or physical means
C30B 25/20
Characterised by the substrate: the substrate being of the same materials as the epitaxial layer

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

Life of this patent

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

Life of this patent

Abstract

Claims15