Back to results
US 10,475,883 B2Granted
Semiconductor device and method of manufacturing thereof
AssigneeRenesas Electronics Corporation
InventorsMasaru Kadoshima, Masahiko Fujisawa
Life of this patent
Estimating the term…
Abstract
In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.
Claims15
A semiconductor device comprising:
- an SOI substrate comprised of a support substrate, a buried insulating layer formed on the support substrate, and a semiconductor layer formed on the buried insulating layer, and including an element isolation portion formed therein, a first active region, and a second active region isolated from the first active region by the element isolation portion;
- a first epitaxial layer formed on the semiconductor layer in the first active region;
- a second epitaxial layer formed on the semiconductor layer in the second active region;
- a first plug connected to the first epitaxial layer;
- and
- a second plug connected to the second epitaxial layer,
- wherein a width of the second active region in a first direction is greater than a width of the first active region in the first direction,
- wherein a thickness of an end portion of the second epitaxial layer, which is in contact with the element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and
- wherein a second shortest distance between the element isolation portion and the second plug in the first direction is greater than a first shortest distance between the element isolation portion and the first plug in the first direction.
6 more elements
A semiconductor device comprising:
- an SOI substrate comprised of a support substrate, a buried insulating layer formed on the support substrate, and a semiconductor layer formed on the buried insulating layer, and including an element isolation portion formed therein and an active region surrounded by the element isolation portion in a plan view;
- an epitaxial layer formed on the semiconductor layer in the active region;
- and
- a plug connected to the epitaxial layer,
- wherein the epitaxial layer includes:
- a wide portion that has a first width in a first direction in a plan view;
- and
- a plurality of narrow portions that have a second width smaller than the first width in the first direction in a plan view, are formed integrally with the wide portion, and are arranged in the first direction, and
- wherein the plug is connected to at least one of the plurality of narrow portions.
6 more elements
A method of manufacturing a semiconductor device comprising:
- (a) preparing an SOI substrate comprised of a support substrate, a buried insulating layer formed on the support substrate, and a semiconductor layer formed on the buried insulating layer;
- (b) forming an element isolation portion in the SOI substrate, thereby forming, in the SOI substrate, a first active region having a first width in a first direction and a second active region isolated from the first active region by the element isolation portion and also having a second width in the first direction greater than the first width;
- (c) forming a first epitaxial layer on the semiconductor layer in the first active region and forming a second epitaxial layer on the semiconductor layer in the second active region by using an epitaxial growth method;
- (d) forming an interlayer insulating film that covers the first epitaxial layer and the second epitaxial layer;
- and
- (e) forming a first plug that penetrates through the interlayer insulating film to reach the first epitaxial layer and forming a second plug that penetrates through the interlayer insulating film to reach the second epitaxial layer,
- wherein, in the step (c), a thickness of an end portion of the second epitaxial layer, which is in contact with the element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and
- wherein, in the step (e), the first plug and the second plug are formed in the interlayer insulating film such that a second shortest distance between the element isolation portion and the second plug in the first direction is greater than a first shortest distance between the element isolation portion and the first plug in the first direction.
5 more elements
Dependencies are inferred from the claim text.