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US 10,475,882 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsShigeaki Saito, Yoshito Nakazawa, Hitoshi Matsuura, Yukio Takahashi
Life of this patent
Estimating the term…
Abstract
The reliability of a semiconductor device is improved. A contact trench for coupling a field plate and a field limiting ring situated at the corner part of a semiconductor device is formed of a first straight line part and a second straight line part arranged line symmetrically with respect to the crystal orientation <011>. Respective one ends of the first straight line part and the second straight line part are coupled at the crystal orientation <011>, and the first straight line part and the second straight line part are set to extend in different directions from the crystal orientation <010> and the crystal orientation <011>.
Claims13
A semiconductor device, comprising:
- a semiconductor substrate having a first main surface having a first side, and a second side orthogonal to the first side, and a second main surface opposite to the first main surface;
- a cell formation region formed at the first main surface, and having a plurality of transistors;
- a first semiconductor region of a first conductivity type continuously surrounding the periphery of the cell formation region, and formed at the first main surface of the semiconductor substrate;
- an insulation film formed over the first main surface of the semiconductor substrate;
- a contact trench continuously surrounding the periphery of the cell formation region, and formed in the insulation film and the semiconductor substrate;
- and
- a wire continuously surrounding the periphery of the cell formation region, and formed in the inside of the contact trench and over the insulation film, and coupled with the first semiconductor region,
- wherein the first main surface of the semiconductor substrate is the {100} plane of single crystal silicon,
- wherein the first side and the second side of the semiconductor substrate extend in the <010> direction,
- wherein the contact trench includes a first contact trench extending linearly along the first side, a second contact trench extending linearly along the second side, and a third contact trench coupling the first contact trench with the second contact trench,
- wherein the third contact trench has a first straight line part and a second straight line part symmetrically arranged with respect to the <011> direction tilted by 45° with respect to the <010> direction as the symmetry axis,
- wherein one end of the first straight line part and one end of the second straight line part are coupled with each other, and
- wherein the first straight line part and the second straight line part extend in mutually different directions, and extend in different directions from the <010> direction and the <011> direction.
10 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a first main surface having a first side, and a second side orthogonal to the first side, and a second main surface opposite to the first main surface;
- a cell formation region formed at the first main surface, and having a plurality of transistors;
- a first semiconductor region of a first conductivity type continuously surrounding the periphery of the cell formation region, and formed at the first main surface of the semiconductor substrate;
- an insulation film formed over the first main surface of the semiconductor substrate;
- a contact trench continuously surrounding the periphery of the cell formation region, and formed in the insulation film and the semiconductor substrate;
- and
- a wire continuously surrounding the periphery of the cell formation region, and formed in the inside of the contact trench and over the insulation film, and coupled with the first semiconductor region,
- wherein the first main surface of the semiconductor substrate is the {100} plane of single crystal silicon,
- wherein the first side and the second side of the semiconductor substrate extend in the <011> direction,
- wherein the contact trench includes a first contact trench extending linearly along the first side, and
- wherein the sidewall of the first contact trench is tilted by 35° with respect to the plane perpendicular to the first main surface.
8 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a first main surface having a first side, and a second side orthogonal to the first side, and a second main surface opposite to the first main surface;
- a cell formation region formed at the first main surface, and having a plurality of transistors;
- a first semiconductor region of a first conductivity type continuously surrounding the periphery of the cell formation region, and formed at the first main surface of the semiconductor substrate;
- an insulation film formed over the first main surface of the semiconductor substrate;
- a plurality of contact trenches arranged so as to surround the periphery of the cell formation region, and formed in the insulation film and the semiconductor substrate;
- and
- a wire continuously surrounding the periphery of the cell formation region, and formed in each inside of the contact trenches and over the insulation film, and coupled with the first semiconductor region,
- wherein the first main surface of the semiconductor substrate is the {100} plane of single crystal silicon,
- wherein the first side and the second side of the semiconductor substrate extend in the <011> direction, and
- wherein the sidewalls of the contact trenches are tilted by 35° with respect to the plane perpendicular to the first main surface.
7 more elements
Dependencies are inferred from the claim text.