Semiconductor devices with steep junctions and methods of manufacturing thereof

A method of manufacturing semiconductor devices, the method comprising:

• generating crystal lattice vacancies in a pretreated section of a semiconductor layer directly adjoining a process surface, wherein a vertical extension of the pretreated section is at least 500 nm, and defined as a distance to the process surface where a lattice vacancy density falls to a value that is less than 80% or less than half the difference between a maximum vacancy density in the pretreated section and a mean vacancy density in a section of the semiconductor layer outside of and directly adjoining the pretreated section;
• implanting dopants into the pretreated section to form a doped layer;
• and
• heating a melt section of the semiconductor layer by irradiating the process surface with a laser beam activating the implanted dopants in the melt section.