Transistor device with high avalanche robustness

A transistor device, comprising:

• a drain node, a source node and a gate node;
• a plurality of drift and compensation cells each comprising a drift region of a first doping type and a compensation region of a second doping type complementary to the first doping type;
• and
• a control structure connected between the drift region of each of the drift and the compensation cells and the source node,
• wherein the drift region of each of the plurality of drift and compensation cells is coupled to the drain node and the compensation region of each of the plurality of drift and compensation cells is coupled to the source node,
• wherein each of the plurality of drift and compensation cells, in the current flow direction of the transistor device, has a first end, a second end opposite the first end, a first intermediate position spaced apart from the first end and the second end, and a second intermediate position spaced apart from the first end and the second end,
• wherein a first doping parameter of a first doping profile that represents the doping concentration of the drift region in the current flow direction monotonically increases from the second intermediate position to the second end, and
• wherein a second doping parameter of a second doping profile that represents the doping concentration of the compensation region in the current flow direction monotonically increases from the first intermediate position to the first end.