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AssigneeSanDisk Technologies LLC
InventorsJayavel Pachamuthu, Hiroyuki Kinoshita, Yao-Sheng Lee
Estimating the term…
Multiple tier structures including a respective alternating stack of insulating layers and electrically conductive layers is formed over a substrate. A memory opening fill structure extends through the alternating stacks, and includes a vertical semiconductor channel and a memory film. A support pillar structure extends through at least an upper alternating stack, and includes a dummy memory film and a dummy memory film. The support pillar structure may be narrower than the memory opening fill structure at a bottommost layer of the upper alternating stack. Additionally or alternatively, the dummy memory film may be located above a horizontal plane including a topmost surface of a lower alternating stack. Optionally, another support pillar structure including a dielectric material may be provided underneath the support pillar structure in the lower alternating stack. A dielectric material can be provided at levels of the lower alternating stack in a support pillar structure to reduce inter-level leakage current.
A three-dimensional memory device, comprising:
A method of forming a three-dimensional memory device, comprising:
Dependencies are inferred from the claim text.