Back to results
US 10,475,853 B2Granted
Replacement materials processes for forming cross point memory
AssigneeMicron Technology, Inc.
InventorsJong-Won Lee, Gianpaolo Spadini, Stephen W. Russell, Derchang Kau
Life of this patent
Estimating the term…
Abstract
Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
Claims18
A method, comprising:
- patterning a material stack to form a plurality of first line stacks extending in a first direction, wherein each first line stack of the plurality of first line stacks comprises a lower electrode line, a middle electrode line, an upper electrode line, and a memory cell that comprises at least one of a storage element or a selector element;
- and
- forming a second line stack after forming the plurality of first line stacks, wherein forming the second line stack comprises forming a sacrificial line.
An apparatus, comprising:
- a first line stack extending in a first direction and comprising a chalcogenide line, a first electrode, and a second electrode, wherein the first and second electrodes are electrically isolated in both the first direction and a second direction different from the first direction;
- and
- a second line stack extending in the second direction and comprising a conductive line.
A method comprising:
- forming a first line stack oriented in a first direction;
- forming a second line stack that comprises a sacrificial line oriented in a second direction different from the first direction;
- and
- replacing the sacrificial line with a conductive line comprising a chalcogenide material.
1 more element
Dependencies are inferred from the claim text.