Method of manufacturing solid-state image sensor, solid-state image sensor, and camera
AssigneeCanon Kabushiki Kaisha
InventorToshihiro Shoyama
Life of this patent
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Abstract
A method of manufacturing a solid-state image sensor comprising a pixel part including a photoelectric conversion element and a MOS transistor, comprising steps of forming a first insulating film made of a nitrogen-containing silicon compound on the photoelectric conversion element and the MOS transistor, forming an opening in at least a portion of the first insulating film, which is positioned above a channel of the MOS transistor, forming a second insulating film on the first insulating film, forming a contact hole extending through the second insulating film and the first insulating film, and forming, in the contact hole, a contact plug to be connected to the MOS transistor.
Claims21
A method of manufacturing a solid-state image sensor in which pixels are arranged, each of the pixels including a photoelectric conversion element and a first transistor, which is a MOS transistor, the method comprising:
- forming a first insulating film made of a nitrogen-containing silicon compound on the photoelectric conversion element and the first transistor;
- forming an opening in the first insulating film so that the opening is positioned above at least a portion of source/drain regions of the first transistor;
- forming a silicon oxide film to cover the opening in the first insulating film;
- forming a second insulating film on the first insulating film, after the forming of the opening and the forming of the silicon oxide film;
- depositing a metal on the silicon oxide film between the forming of the silicon oxide film and the forming of the second insulating film;
- etching the second insulating film and the first insulating film to form a contact hole extending through the second insulating film, the silicon oxide film, and the first insulating film;
- and
- forming, in the contact hole, a first contact plug in contact with the first insulating film and the second insulating film.
A solid-state image sensor in which pixels are arranged, comprising:
- a photoelectric conversion element, which is included in each of the pixels;
- a first MOS transistor, which is included in each of the pixels;
- a second MOS transistor, which is included in each of the pixels;
- a third MOS transistor, which is included in each of the pixels;
- a first insulating film, which is made of a nitrogen-containing silicon compound;
- a second insulating film, which covers the second MOS transistor and the third MOS transistor;
- a first contact plug connected to the second MOS transistor;
- a second contact plug connected to the third MOS transistor,
- wherein:
- the first insulating film continuously extends to cover the photoelectric conversion element, the first MOS transistor, the second MOS transistor, and an element isolation portion adjacent to the third MOS transistor,
- the first insulating film has an opening above the third MOS transistor,
- the second insulating film covers an upper face of the first insulating film and the opening of the first insulating film,
- the first contact plug is in contact with the first insulating film and the second insulating film, and
- the second contact plug is in contact with the second insulating film.
Dependencies are inferred from the claim text.