Semiconductor device with a radiation sensing region and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Han Tsai, Yun-Wei Cheng, Kuo-Cheng Lee, Chun-Hao Chou, Yung-Lung Hsu
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Abstract
A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.
Claims20
A semiconductor device comprising:
- a semiconductor substrate, the semiconductor substrate comprising a semiconductor material;
- a radiation-sensing region in the semiconductor substrate, the radiation-sensing region comprising a first doped region of the semiconductor substrate having first dopants;
- and
- at least one isolation structure in the semiconductor substrate and extending into the radiation-sensing region;
- and
- a doped passivation layer at least partially surrounding the at least one isolation structure in a substantially conformal manner, wherein the doped passivation layer comprises a second doped region of the semiconductor substrate having second dopants, wherein the first dopants and the second dopants are of opposite types, and wherein the doped passivation layer extends along an external surface of the semiconductor substrate.
A semiconductor device comprising:
- a semiconductor substrate;
- a radiation-sensing region in the semiconductor substrate;
- and
- at least one isolation structure in the semiconductor substrate and extending into the radiation-sensing region;
- and
- a doped passivation layer at least partially surrounding the at least one isolation structure in a substantially conformal manner, wherein the doped passivation layer comprises a doped region of the semiconductor substrate, wherein the doped passivation layer extends between a first one of the at least one isolation structure to a second one of the at least one isolation structure.
A semiconductor device comprising:
- a semiconductor substrate;
- a radiation-sensing region in the semiconductor substrate;
- and
- at least one isolation structure in the semiconductor substrate and extending through the radiation-sensing region;
- a doped passivation layer at least partially surrounding the isolation structure in a substantially conformal manner, wherein the doped passivation layer comprises a doped region of the semiconductor substrate, wherein the doped passivation layer extends from a first side of the semiconductor substrate to a second side of the semiconductor substrate opposite the first side;
- and
- a dielectric layer on the second side of the semiconductor substrate, the doped passivation layer being in physical contact with the dielectric layer.
Dependencies are inferred from the claim text.