Semiconductor device structure and manufacturing process thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Ping Pan, Hung-Jen Hsu
Life of this patent
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Abstract
A semiconductor device structure for sensing an incident light includes a substrate, a wiring structure, and at least one passivation layer. The substrate has a device. The at least one passivation layer is disposed above the wiring structure. The at least one passivation layer includes a plurality of microstructures, and each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed below the at least one passivation layer. A method for manufacturing the semiconductor device structure is also provided.
Claims19
A semiconductor device structure for sensing an incident light, the semiconductor device structure comprising:
- a substrate having a light sensing device;
- passivation layers, disposed above the substrate, wherein each of the passivation layers has a first side and a second side opposite to the first side, the second side of each of at least two passivation layers of the passivation layers is a continuous flat plane, the first side of each of the at least two passivation layers of the passivation layers comprises a plurality of microstructures disposed above the light sensing device, and each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc, wherein the second side of one of the at least two passivation layers is directly stacked on the microstructures formed on the first side of other one of the at least two passivation layers;
- and
- a wiring structure, disposed below the passivation layers, wherein the writing structure comprises at least one contact and metal interconnection patterns respectively formed in different dielectric layers, and the at least one contact and the metal interconnection patterns are electrically connected.
A method for manufacturing a semiconductor device structure, the method comprising:
- providing a substrate having a device;
- forming a wiring structure comprising at least one contact and metal interconnection patterns respectively formed in different dielectric layers on the substrate, wherein the at least one contact and the metal interconnection patterns are electrically connected;
- forming a plurality of passivation layers on the wiring structure;
- and
- forming a plurality of microstructures from a first side of each of at least two of the passivation layers, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc, and the first side and a second side of the at least two of the passivation layers are opposite to each other, wherein the second side of each of the at least two of the passivation layers is a continuous flat plane, and the second side of one of the at least two of the passivation layers is directly stacked on the microstructures formed on the first side of other one of the at least two of the passivation layers.
A method for manufacturing a semiconductor device structure, the method comprising:
- providing a substrate having a device;
- forming a wiring structure comprising at least one contact and metal interconnection patterns respectively formed in different dielectric layers on the substrate, wherein the at least one contact and the metal interconnection patterns are electrically connected;
- and
- forming a plurality of passivation layers on the wiring structure and forming a plurality of microstructures from at least two passivation layers of the passivation layers, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc, the passivation layers are directly stacked in a stacking direction of the passivation layers, and the microstructures of the at least two passivation layers are alternately aligned with each other in the stacking direction, wherein a convex portion of each microstructure of one of the at least two passivation layers and a convex portion of each microstructure of other one of the at least two passivation layers protrude towards a same direction, each of the passivation layers has a continuous flat surface opposite to a side having the microstructures, and the convex portion of each microstructure of one of the at least two passivation layers is aligned with a concave portion of each microstructure of other one of the at least two passivation layers.
Dependencies are inferred from the claim text.