Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device

A method for manufacturing a solid-state image sensing device, the method comprising:

• forming a semiconductor substrate;
• forming a first film on a first side of the semiconductor substrate;
• forming a second film on a second side of the semiconductor substrate,
• wherein each of the first film and the second film includes at least one of a metal oxide film or a metal nitride film;
• and
• forming an avalanche photodiode on the semiconductor substrate, wherein the avalanche photodiode comprises:
• a first region of a first conductive type,
• a second region of a second conductive type, wherein the second conductive type is different from the first conductive type, and
• an avalanche region between the first region and the second region, wherein the first region, the second region, and the avalanche region extend in a thickness direction of the semiconductor substrate.

An electronic device, comprising:

• a solid-state image sensing device;
• and
• a signal processing unit configured to process a signal output from the solid-state image sensing device,
• wherein the solid-state image sensing device includes:
• a semiconductor substrate;
• an avalanche photodiode on the semiconductor substrate, wherein the avalanche photodiode comprises:
• a first region of a first conductive type,
• a second region of a second conductive type, wherein the second conductive type is different from the first conductive type, and
• an avalanche region between the first region and the second region, wherein the first region, the second region, and the avalanche region extend in a thickness direction of the semiconductor substrate;
• a first film on a first side of the semiconductor substrate;
• and
• a second film on a second side of the semiconductor substrate, wherein each of the first film and the second film includes at least one of a metal oxide film or a metal nitride film.

A solid-state image sensing device, comprising:

• on-chip lenses;
• a semiconductor substrate including:
• a first region of a first conductive type,
• a second region of a second conductive type,
• wherein the second conductive type is different from the first conductive type, and
• an avalanche region between the first region and the second region;
• metal wiring layers;
• a first film between the on-chip lenses and the semiconductor substrate;
• and
• a second film between the metal wiring layers and the semiconductor substrate,
• wherein each of the first film and the second film includes at least one of a metal oxide or a metal nitride.