Semiconductor apparatus and equipment

A semiconductor apparatus comprising:

• a semiconductor substrate;
• a conductive member which is arranged above the semiconductor substrate and which includes a polycrystalline silicon layer having a first portion, a second portion, and a third portion between the first and the second portions in a direction extending along a main surface of the semiconductor substrate;
• an interlayer insulation film that covers the conductive member;
• a first silicon nitride layer arranged between the interlayer insulation film and the third portion;
• a second silicon nitride layer arranged between the interlayer insulation film and the first portion, and between the interlayer insulation layer and the second portion;
• a first contact plug disposed above the first portion, the first contact plug penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member;
• and
• a second contact plug disposed above the second portion, the second contact plug penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member,
• wherein the first silicon nitride layer is disposed between the first contact plug and the second contact plug in the direction and apart from the first contact plug and the second contact plug, and
• wherein a distance between the second silicon nitride layer and the conductive member is shorter than a distance between the first silicon nitride layer and the conductive member.

A semiconductor apparatus comprising:

• a semiconductor substrate;
• a conductive member which is arranged above the semiconductor substrate and which includes a polycrystalline silicon layer having a first portion, a second portion, and a third portion between the first and the second portions in a direction extending along a main surface of the semiconductor substrate;
• an interlayer insulation film that covers the conductive member;
• a first silicon nitride layer arranged between the interlayer insulation film and the third portion;
• a second silicon nitride layer arranged between the interlayer insulation film and the first portion, and between the interlayer insulation layer and the second portion;
• a first contact plug disposed above the first portion, the first contact plug penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member;
• and
• a second contact plug disposed above the second portion, the second contact plug penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member,
• wherein the first silicon nitride layer is disposed between the first contact plug and the second contact plug in the direction and apart from the first contact plug and the second contact plug,
• wherein an insulation member thicker than the first silicon nitride layer is arranged between the conductive member and the semiconductor substrate, and
• wherein the second silicon nitride layer is extended and disposed to cover an edge of the insulation member in the direction extending along the main surface.