Array substrate, display panel and display apparatus having the same, and fabricating method thereof

An array substrate, comprising:

• a base substrate;
• a first electrode and a second electrode, the first electrode and the second electrode being two different electrodes selected from a pixel electrode and a common electrode;
• and
• a thin film transistor comprising an active layer, an etch stop layer on a side of the active layer away from the base substrate, a first node, and a second node;
• wherein the active layer comprises a channel region, a first node contact region, and a second node contact region;
• a projection of the channel region on the base substrate substantially overlaps with that of the etch stop layer;
• a projection of the first node contact region and the second node contact region on the base substrate are outside that of the etch stop layer;
• the first node is on a side of the first node contact region away from the base substrate;
• and the second node is on a side of the second node contact region away from the base substrate;
• an orthographic projection of at least a first portion of the first electrode on the base substrate overlaps with an orthographic projection of the second electrode on the base substrate;
• and
• the active layer and at least the first portion of the first electrode are in a same layer, and are made of a semiconductor material comprising M1OaNb, wherein M1 is a single metal or a combination of metals, a>0, and b≥0;
• wherein the second electrode is on a side of the first electrode closer to the base substrate.

An array substrate, comprising:

• a base substrate;
• a first electrode and a second electrode, the first electrode and the second electrode being two different electrodes selected from a pixel electrode and a common electrode;
• and
• a thin film transistor comprising an active layer, an etch stop layer on a side of the active layer away from the base substrate, a first node, and a second node;
• wherein the active layer comprises a channel region, a first node contact region, and a second node contact region;
• a projection of the channel region on the base substrate substantially overlaps with that of the etch stop layer;
• a projection of the first node contact region and the second node contact region on the base substrate are outside that of the etch stop layer;
• the first node is on a side of the first node contact region away from the base substrate;
• and the second node is on a side of the second node contact region away from the base substrate;
• an orthographic projection of at least a first portion of the first electrode on the base substrate overlaps with an orthographic projection of the second electrode on the base substrate;
• and
• the active layer and at least the first portion of the first electrode are in a same layer, and are made of a semiconductor material comprising M1OaNb, wherein M1 is a single metal or a combination of metals, a>0, and b≥0;
• wherein the first electrode is the pixel electrode and the second electrode is the common electrode;
• wherein the thin film transistor further comprises a gate electrode on the base substrate;
• wherein the array substrate further comprises:
• a common electrode signal line in a same layer as the gate electrode;
• and
• a gate insulating layer between the gate electrode and the active layer;
• wherein the common electrode is electrically connected to the common electrode signal line;
• wherein the common electrode is on a side of the gate insulating layer closer to the base substrate or on a side of a passivation layer away from the gate insulating layer.

An array substrate, comprising:

• a base substrate;
• a first electrode and a second electrode, the first electrode and the second electrode being two different electrodes selected from a pixel electrode and a common electrode;
• and
• a thin film transistor comprising an active layer, an etch stop layer on a side of the active layer away from the base substrate, a first node, and a second node;
• wherein the active layer comprises a channel region, a first node contact region, and a second node contact region;
• a projection of the channel region on the base substrate substantially overlaps with that of the etch stop layer;
• a projection of the first node contact region and the second node contact region on the base substrate are outside that of the etch stop layer;
• the first node is on a side of the first node contact region away from the base substrate;
• and the second node is on a side of the second node contact region away from the base substrate;
• an orthographic projection of at least a first portion of the first electrode on the base substrate overlaps with an orthographic projection of the second electrode on the base substrate;
• and
• the active layer and at least the first portion of the first electrode are in a same layer, and are made of a semiconductor material comprising M1OaNb, wherein M1 is a single metal or a combination of metals, a>0, and b≥0;
• wherein the first electrode is the common electrode and the second electrode is the pixel electrode.

A method of fabricating an array substrate, comprising:

• forming a first electrode and a second electrode on a base substrate, the first electrode and the second electrode being two different electrodes selected from a pixel electrode and a common electrode, wherein the second electrode is formed on a side of the first electrode closer to the base substrate;
• and
• forming a thin film transistor comprising an active layer, an etch stop layer on a side of the active layer away from the base substrate, a first node, and a second node;
• wherein the active layer is formed to have a channel region, a first node contact region, and a second node contact region;
• a projection of the channel region on the base substrate substantially overlaps with that of the etch stop layer;
• a projection of the first node contact region and the second node contact region on the base substrate are outside that of the etch stop layer;
• the first node is formed on a side of the first node contact region away from the base substrate;
• and the second node is formed on a side of the second node contact region away from the base substrate;
• the first electrode and the second electrode are formed so that an orthographic projection of at least a first portion of the first electrode on the base substrate overlaps with an orthographic projection of the second electrode on the base substrate;
• and
• the active layer and at least the first portion of the first electrode are formed in a same layer, and are formed using a semiconductor material comprising M1OaNb, wherein M1 is a single metal or a combination of metals, a>0, and b≥0.