TFT substrate manufacturing method and TFT substrate

A thin-film transistor (TFT) substrate manufacturing method, comprising the following steps:

• a step of forming a gate metal layer through deposition and patterning, wherein the gate metal layer comprises a gate electrode and reflective blocks, and the reflective blocks and the gate electrode are not connected;
• a step of forming an insulation layer on the gate metal layer;
• a step of forming a photoresist resin layer through forming a complete sheet of photoresist resin film on an entire surface of the insulation layer through coating and subjecting the layer of photoresist resin film to exposure and development, wherein portions of the photoresist resin film that are located above and corresponding to the reflective blocks are exposed and form a first via and a second via;
• and
• a step of forming a first connection hole and a second connection hole by applying etching in the first via and the second via with the photoresist resin layer as a shielding layer;
• wherein the gate metal layer is formed of a material comprising one of molybdenum, titanium, aluminum, and copper or a stacked combination of multiple ones thereof;
• wherein in the step of forming a gate metal layer, the patterning of the gate metal layer comprises carrying out, in sequence, a photo resist coating process, an exposure process, a development process, an etching process, and a photo resist peeling process;
• and
• wherein in the step of forming a first connection hole and a second connection hole, the first connection hole and the second connection hole extend through the insulation layer and the reflective blocks of the gate metal layer.