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US 10,475,818 B2Granted
Transistor with receded conductor, semiconductor device, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshinori Ando, Shinpei Matsuda, Yuki Hata
Life of this patent
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Abstract
A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.
Claims23
A transistor comprising:
- a first oxide;
- a second oxide which is level with the first oxide;
- a first conductor over the first oxide, wherein a first side surface of the first conductor recedes from a first side surface of the first oxide;
- a second conductor over the second oxide, wherein a first side surface of the second conductor recedes from a first side surface of the second oxide;
- a third oxide in contact with the first side surface of the first conductor, a top surface and the first side surface of the first oxide, the first side surface of the second conductor, and a top surface and the first side surface of the second oxide;
- and
- a gate electrode overlapping with the third oxide,
- wherein a bottom surface of the third oxide is below a bottom surface of the first oxide.
5 more elements
A transistor comprising:
- an insulating film;
- a first oxide semiconductor layer over the insulating film;
- a second oxide semiconductor layer which is level with the first oxide semiconductor layer;
- a first conductor over the first oxide semiconductor layer, wherein a first side surface of the first conductor recedes from a first side surface of the first oxide semiconductor layer;
- a second conductor over the second oxide semiconductor layer, wherein a first side surface of the second conductor recedes from a first side surface of the second oxide semiconductor layer;
- a third oxide semiconductor layer in contact with the first side surface of the first conductor, a top surface and the first side surface of the first oxide semiconductor layer, a top surface of the insulating film, the first side surface of the second conductor, and a top surface and the first side surface of the second oxide semiconductor layer;
- and
- a gate electrode overlapping with the third oxide semiconductor layer,
- wherein a bottom surface of the third oxide semiconductor layer is below a bottom surface of the first oxide semiconductor layer.
6 more elements
A semiconductor device comprising a first transistor and a second transistor,
- the first transistor comprising:
- a first oxide semiconductor layer on an insulating film;
- a second oxide semiconductor layer which is level with the first oxide semiconductor layer;
- a first conductor over the first oxide semiconductor layer, wherein a first side surface of the first conductor recedes from a first side surface of the first oxide semiconductor layer;
- a second conductor over the second oxide semiconductor layer, wherein a first side surface of the second conductor recedes from a first side surface of the second oxide semiconductor layer;
- a third oxide semiconductor layer in contact with the first side surface of the first conductor, a top surface and the first side surface of the first oxide semiconductor layer, a top surface of the insulating film, the first side surface of the second conductor, and a top surface and the first side surface of the second oxide semiconductor layer;
- and
- a first gate electrode overlapping with the third oxide semiconductor layer;
- and
- the second transistor comprising:
- a fourth oxide semiconductor layer on the insulating film;
- a third conductor over a first region of the fourth oxide semiconductor layer;
- a fourth conductor over a second region of the fourth oxide semiconductor layer;
- a fifth oxide semiconductor layer in contact with a first side surface of the third conductor, a top surface of the fourth oxide semiconductor layer, and a first side surface of the fourth conductor;
- and
- a second gate electrode overlapping with the fifth oxide semiconductor layer,
- wherein a bottom surface of the third oxide semiconductor layer is below a bottom surface of the first oxide semiconductor layer,
- wherein the first oxide semiconductor layer, the second oxide semiconductor layer, and the fourth oxide semiconductor layer each comprise a material having a same composition, and
- wherein the third oxide semiconductor layer and the fifth oxide semiconductor layer each comprise a material having a same composition.
16 more elements
Dependencies are inferred from the claim text.