Body current bypass resistor
AssigneeQUALCOMM Incorporated
InventorsRavi Pramod Kumar Vedula, Sinan Goktepeli, Jarred Moore
Life of this patent
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Abstract
A radio frequency integrated circuit (RFIC) is described. The RFIC includes a switch field effect transistor (FET), including a source region, a drain region, a body region, and a gate. The RFIC also includes a body bypass resistor coupled between the gate and the body region. The RFIC further includes a gate isolation resistor coupled between the gate and the body region. The RFIC also includes a diode coupled between the body bypass resistor and the gate isolation resistor.
Claims18
A radio frequency integrated circuit (RFIC), comprising:
- a switch field effect transistor (FET) including a source region, a drain region, a body region, and a gate;
- a body bypass resistor coupled between an internal voltage (Vint) node and the body region;
- a gate isolation resistor coupled between the gate and the internal voltage (Vint) node, a resistance of the gate isolation resistor being greater than a resistance of the body bypass resistor;
- and
- a diode coupled between the body bypass resistor and the gate isolation resistor.
A method of constructing an radio frequency (RF) integrated circuit having a switch field effect transistor (FET), comprising:
- tying a gate to a body region of the switch FET;
- fabricating a body bypass resistor between an internal voltage (Vint) node and the body region;
- and
- fabricating a gate isolation resistor between the gate and the internal voltage (Vint) node, a resistance of the gate isolation resistor being greater than a resistance of the body bypass resistor.
A radio frequency integrated circuit (RFIC), comprising:
- a switch field effect transistor (FET) including a source region, a drain region, a body region, and a gate, in which the body region is tied to the gate;
- means for isolating the gate from a body current of the body region;
- means for directing the body current from the body region away from the gate of the switch FET, a resistance of the directing means having a lower value than a resistance of the isolating means;
- and
- a diode coupled between the means for isolating and the means for directing.
Dependencies are inferred from the claim text.